Electrical and dielectric properties of Zn1-xFexO nanoparticles synthesizes by co-precipitation method
Paper ID : 1050-ISCH
Authors
Zeyad Ahmed Taalab *1, Magdy Abdo El-Hagary1, Mohamed Ibrahim Amer1, Said Moustafa1, Hany Mohamed Hashem1, Mahmoud Hammam1, Mohamed Emam Ismail2, Essam Ramadan Shaaban3
1Physics Department, Faculty of Science, Helwan University, 11792, Helwan, Cairo, Egypt
2Spectroscopy of Polarized Light Laboratory, Physics Department, Faculty of Science, Galala University, New Galala City, Suez, 43511, Cairo, Egypt
3Physics Department, Faculty of Science, Al-Azhar University, 71452, Assiut, Egypt
Abstract
A functional diluted magnetic semiconductor (DMS) with a Curie temperature Tc comfortably above room temperature has been developed over the last few years with great effort.
The NPs' hexagonal shape was revealed by their structure and microstructural analysis, and their average crystallite size fluctuated from 43.75 nm (x = 0) to 38.13 nm (x = 0.12), indicating that they are nano-crystalline novel materials with distinctive properties. Surface morphological investigations conducted using a Transmission Electron Microscope (TEM) indicates a variation in particle size with an increase in Fe doping level in ZnO.
The dielectric constant and dielectric loss have high values at low frequencies and decreases before reaching a constant value at higher frequencies. The amount of doped iron in single-phase samples affects the dielectric constant and dielectric loss at low frequencies, with a significant decrease. The dielectric constant initially increases with temperature at high frequencies and then decreases with further temperature rise. The AC electrical conductivity of Fe-doped ZnO increases with frequency due to increased hopping between charge carriers. However, conductivity decreases with increased Fe concentration. The conductivity varies at different frequencies and increases with temperature.
Keywords
Diluted magnetic semiconductors; Nanoparticles; Microstructure properties; Electrical properties; Room temperature ferromagnetism; optoelectronic and spintronic applications
Status: Abstract Accepted (Poster Presentation)